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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs

✍ Scribed by Uchida, K.; Zednik, R.; Ching-Huang Lu, ; Jagannathan, H.; McVittie, J.; McIntyre, P.C.; Nishi, Y.

Book ID: 118172163
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 294 KB
Volume: 0
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/iedm.2004.1419116

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