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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

✍ Scribed by Baek, I.G.; Lee, M.S.; Sco, S.; Lee, M.J.; Seo, D.H.; Suh, D.-S.; Park, J.C.; Park, S.O.; Kim, H.S.; Yoo, I.K.; Chung, U.-I.; Moon, J.T.

Book ID: 111988262
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 257 KB
Volume: 0
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/iedm.2004.1419228

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