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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Mobility improvement for 45nm node by combination of optimized stress control and channel orientation design

✍ Scribed by Komoda, T.; Oishi, A.; Sanuki, T.; Kasai, K.; Yoshimura, H.; Ohno, K.; lwai, M.; Saito, M.; Matsuoka, F.; Nagashima, N.; Noguchi, T.

Book ID: 111876364
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 255 KB
Volume: 0
Category: Article
ISBN-13: 9780780386846
DOI: 10.1109/iedm.2004.1419113

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