[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

✍ Scribed by Krishnan, S.; Kwon, U.; Moumen, N.; Stoker, M.W.; Harley, E.C.T.; Bedell, S.; Nair, D.; Greene, B.; Henson, W.; Chowdhury, M.; Prakash, D.P.; Wu, E.; Ioannou, D.; Cartier, E.; Na, M.-H.; Inumiya, S.; Mcstay, K.; Edge, L.; Iijima, R.; Cai, J.; Frank, M.; Hargrove, M.; Guo, D.; Kerber, A.; Jagannathan, H.; Ando, T.; Shepard, J.; Siddiqui, S.; Dai, M.; Bu, H.; Schaeffer, J.; Jaeger, D.; Barla, K.; Wallner, T.; Uchimura, S.; Lee, Y.; Karve, G.; Zafar, S.; Schepis, D.; Wang, Y.; Donaton, R.; Saroop, S.; Montanini, P.; Liang, Y.; Stathis, J.; Carter, R.; Pal, R.; Paruchuri, V.; Yamasaki, H.; Lee, J-H.; Ostermayr, M.; Han, J-P.; Hu, Y.; Gribelyuk, M.; Park, D.-G.; Chen, X.; Samavedam, S.; Narasimha, S.; Agnello, P.; Khare, M.; Divakaruni, R.; Narayanan, V.; Chudzik, M.

• Book ID: 115540972
• Publisher: IEEE
• Year: 2011
• Weight: 950 KB
• Volume: 0
• Category: Article
• ISBN: 1457705044
• DOI: 10.1109/iedm.2011.6131628