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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance

✍ Scribed by Srivastava, P.; Oprins, H.; Van Hove, M.; Das, J.; Malinowski, P.E.; Bakeroot, B.; Marcon, D.; Visalli, D.; Kang, X.; Lenci, S.; Geens, K.; Viaene, J.; Cheng, K.; Leys, M.; De Wolf, I.; Decoutere, S.; Mertens, R. P.; Borghs, G.

Book ID: 120630567
Publisher: IEEE
Year: 2011
Weight: 350 KB
Category: Article
ISBN: 1457705044
DOI: 10.1109/IEDM.2011.6131587

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