𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting -

✍ Scribed by Elfrink, R.; Matova, S.; de Nooijer, C.; Jambunathan, M.; Goedbloed, M.; van de Molengraft, J.; Pop, V.; Vullers, R.J.M.; Renaud, M.; van Schaijk, R.

Book ID: 111672799
Publisher: IEEE
Year: 2011
Weight: 945 KB
Volume: 0
Category: Article
DOI: 10.1109/iedm.2011.6131639

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2011 IEEE International Electron D

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting -

✍ Vullers, R.J.M.; van Schaijk, R.; Goedbloed, M.; Elfrink, R.; Wang, Z.; Van Hoof 📂 Article 📅 2011 🏛 IEEE ⚖ 378 KB

[IEEE 2011 IEEE International Electron D

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting -

✍ Luisier, Mathieu; Lundstrom, Mark; Antoniadis, Dimitri A.; Bokor, Jeffrey 📂 Article 📅 2011 🏛 IEEE ⚖ 470 KB

[IEEE 2011 IEEE International Electron D

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Is graphene contacting with metal still graphene?

✍ Nagashio, K.; Moriyama, T.; Ifuku, R.; Yamashita, T.; Nishimura, T.; Toriumi, A. 📂 Article 📅 2011 🏛 IEEE ⚖ 740 KB

[IEEE 2011 IEEE International Electron D

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - High performance SiC trench devices with ultra-low ron

✍ Nakamura, T.; Nakano, Y.; Aketa, M.; Nakamura, R.; Mitani, S.; Sakairi, H.; Yoko 📂 Article 📅 2011 🏛 IEEE ⚖ 466 KB

[IEEE 2011 IEEE International Electron D

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Transistor matching and silicon thickness variation in ETSOI technology

✍ Hook, Terence B.; Vinet, Maud; Murphy, Richard; Ponoth, Shom; Grenouillet, Laure 📂 Article 📅 2011 🏛 IEEE ⚖ 452 KB

[IEEE 2011 IEEE International Electron D

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Modeling of NMOS performance gains from edge dislocation stress

✍ Weber, Cory E.; Cea, Stephen M.; Deshpande, Hemant; Golonzka, Oleg; Liu, Mark Y. 📂 Article 📅 2011 🏛 IEEE ⚖ 969 KB