✦ LIBER ✦

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Modeling of NMOS performance gains from edge dislocation stress

✍ Scribed by Weber, Cory E.; Cea, Stephen M.; Deshpande, Hemant; Golonzka, Oleg; Liu, Mark Y.

No coin nor oath required. For personal study only.

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