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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE

✍ Scribed by Brown, D. F.; Williams, A.; Shinohara, K.; Kurdoghlian, A.; Milosavljevic, I.; Hashimoto, P.; Grabar, R.; Burnham, S.; Butler, C.; Willadsen, P.; Micovic, M.

Book ID: 121848671
Publisher: IEEE
Year: 2011
Weight: 572 KB
Category: Article
ISBN: 1457705044
DOI: 10.1109/IEDM.2011.6131584

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