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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Fundamental aspects of HfO2-based high-k metal gate stack reliability and implications on tinv-scaling

✍ Scribed by Cartier, E.; Kerber, A.; Ando, T.; Frank, M. M.; Choi, K.; Krishnan, S.; Linder, B.; Zhao, K.; Monsieur, F.; Stathis, J.; Narayanan, V.

Book ID: 121724213
Publisher: IEEE
Year: 2011
Weight: 502 KB
Category: Article
ISBN: 1457705044
DOI: 10.1109/IEDM.2011.6131579

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