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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - A high-performance, high-density 28nm eDRAM technology with high-K/metal-gate

✍ Scribed by Huang, K.C.; Ting, Y.W.; Chang, C.Y.; Tu, K.C.; Tzeng, K.C.; Chu, H.C.; Pai, C.Y.; Katoch, A.; Kuo, W.H.; Chen, K.W.; Hsieh, T.H.; Tsai, C.Y.; Chiang, W.C.; Lee, H.F.; Achyuthan, A.; Chen, C.Y.; Chin, H.W.; Wang, M.J; Wang, C.J.; Tsai, C.S.; Oconnell, C.M.; Natarajan, S.; Wuu, S.G.; Wang, I.F.; Hwang, H.Y.; Tran, L.C.

Book ID: 121862465
Publisher: IEEE
Year: 2011
Weight: 329 KB
Category: Article
ISBN: 1457705044
DOI: 10.1109/IEDM.2011.6131608

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