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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Superior NBTI reliability of SiGe channel pMOSFETs: Replacement gate, FinFETs, and impact of Body Bias

✍ Scribed by Franco, J.; Kaczer, B.; Eneman, G.; Roussel, Ph.J.; Grasser, T.; Mitard, J.; Ragnarsson, L.-A.; Cho, M.; Witters, L.; Chiarella, T.; Togo, M.; Wang, W.-E; Hikavyy, A.; Loo, R.; Horiguchi, N.; Groeseneken, G.

Book ID: 120067617
Publisher: IEEE
Year: 2011
Weight: 593 KB
Category: Article
ISBN: 1457705044
DOI: 10.1109/IEDM.2011.6131580

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