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[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Investigation of monotonous increase in saturation-region drain current during hot carrier stress in N-type Lateral Diffused MOSFET with STI

✍ Scribed by Yu-Hui Huang, ; Shih, J.R.; Lee, Y.H.; Sunnys Hsieh, ; Liu, C.C.; Wu, Kenneth; Chou, H.L.

Book ID: 120824789
Publisher: IEEE
Year: 2010
Weight: 472 KB
Category: Article
ISBN: 1424454301
DOI: 10.1109/IRPS.2010.5488832

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