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[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Impact of charge trapping on the voltage acceleration of TDDB in metal gate/high-k n-channel MOSFETs

✍ Scribed by Kerber, A.; Vayshenker, A.; Lipp, D.; Nigam, T.; Cartier, E.

Book ID: 120557711
Publisher: IEEE
Year: 2010
Weight: 380 KB
Category: Article
ISBN: 1424454301
DOI: 10.1109/IRPS.2010.5488803

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