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[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Interface-trap modeling for silicon-nanowire MOSFETs

✍ Scribed by Chen, Zuhui; Zhou, Xing; Zhu, Guojun; Lin, Shihuan

Book ID: 120158059
Publisher: IEEE
Year: 2010
Weight: 370 KB
Category: Article
ISBN: 1424454301
DOI: 10.1109/IRPS.2010.5488693

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