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[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Reliability characterization of 32nm high-K and Metal-Gate logic transistor technology

✍ Scribed by Pae, Sangwoo; Ashok, Ashwin; Jingyoo Choi, ; Ghani, Tahir; Jun He, ; Seok-hee Lee, ; Lemay, Karen; Liu, Mark; Lu, Ryan; Packan, Paul; Parker, Chris; Purser, Richard; St. Amour, Anthony; Woolery, Bruce

Book ID: 118271186
Publisher: IEEE
Year: 2010
Weight: 591 KB
Volume: 0
Category: Article
ISBN: 1424454301
DOI: 10.1109/irps.2010.5488814

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