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[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Characterization of Gate-All-Around Si-NWFET, including Rsd, cylindrical coordinate based 1/f noise and hot carrier effects

✍ Scribed by Baek, Rock-Hyun; Choi, Hyun-Sik; Sagong, Hyun Chul; Lee, Sang-Hyun; Choi, Gil-Bok; Song, Seung Hyun; Park, Chan-Hoon; Lee, Jeong-Soo; Jeong, Yoon-Ha; Baek, Chang-Ki; Kim, Dae Mann; Yeoh, Yun Young; Yeo, Kyoung Hwan; Kim, Dong-Won; Kim, Kinam

Book ID: 120555149
Publisher: IEEE
Year: 2010
Weight: 765 KB
Category: Article
ISBN: 1424454301
DOI: 10.1109/IRPS.2010.5488846

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