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[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Time dependent dielectric breakdown and stress induced leakage current characteristics of 8Å EOT HfO2 N-MOSFETS

✍ Scribed by O'Connor, Robert; Hughes, Greg; Kauerauf, Thomas; Ragnarsson, Lars-Ake

Book ID: 120559695
Publisher: IEEE
Year: 2010
Weight: 385 KB
Category: Article
ISBN: 1424454301
DOI: 10.1109/IRPS.2010.5488730

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