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[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Hot-Carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature

✍ Scribed by Bravaix, A.; Guerin, C.; Huard, V.; Roy, D.; Roux, J.M.; Vincent, E.

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