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[IEEE 2009 IEEE International Reliability Physics Symposium (IRPS) - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Hot carrier effects in trench-based integrated power transistors

✍ Scribed by Moens, P.; Roig, J.; Desoete, B.; Bauwens, F.; Tack, M.

Book ID: 126709382
Publisher: IEEE
Year: 2009
Weight: 934 KB
Category: Article
ISBN: 1424428882
DOI: 10.1109/IRPS.2009.5173289

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