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[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Investigation on hot carrier reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor

✍ Scribed by Yeoh, Yun Young; Suk, Sung Dae; Li, Ming; Yeo, Kyoung Hwan; Kim, Dong-Won; Jin, Gyoyoung; Oh, Kyoungsuk

No coin nor oath required. For personal study only.

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