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[IEEE 2008 IEEE International Conference on Microelectronic Test Structure (ICMTS) - Edinburgh, UK (2008.03.24-2008.03.27)] 2008 IEEE International Conference on Microelectronic Test Structures - Measurement of the MOSFET drain current variation under high gate voltage

✍ Scribed by Tetsuo Chagawa, ; Kazuo Terada, ; Jianyu Xiang, ; Katsuhiro Tsuji, ; Takaaki Tsunomura, ; Akio Nishida,

No coin nor oath required. For personal study only.

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