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[IEEE 2006 IEEE International Integrated Reliability Workshop Final Report - South Lake Tahoe, CA, USA (2006.10.16-2006.09.19)] 2006 IEEE International Integrated Reliability Workshop Final Report - Ultra-Fast Measurements of VTH Instability in SiC MOSFETs due to Positive and Negative Constant Bias Stress

✍ Scribed by Gurfinkel, M.; Suehle, J.; Bernstein, J.B.; Shapira, Y.; Lelis, A.J.; Habersat, D.; Goldsman, N.

Book ID: 126631880
Publisher: IEEE
Year: 2006
Weight: 860 KB
Category: Article
ISBN-13: 9781424402977
DOI: 10.1109/IRWS.2006.305209

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