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[IEEE 2008 IEEE International Integrated Reliability Workshop Final Report (IRW) - South lake Tahoe, CA, USA (2008.10.12-2008.10.16)] 2008 IEEE International Integrated Reliability Workshop Final Report - Positive Bias Temperature Instability Effects in advanced High-k / Metal Gate NMOSFETs

✍ Scribed by Ioannou, D.P.; Mittl, S.; LaRosa, G.

Book ID: 126863534
Publisher: IEEE
Year: 2008
Weight: 926 KB
Category: Article
ISBN: 1424421942
DOI: 10.1109/irws.2008.4796085

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