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[IEEE 2008 IEEE International Integrated Reliability Workshop Final Report (IRW) - South lake Tahoe, CA, USA (2008.10.12-2008.10.16)] 2008 IEEE International Integrated Reliability Workshop Final Report - Investigation of GIDL current Injection Disturb Mechanism in two-transistor-eNVM memory devices

✍ Scribed by Kim, S.R.; Han, K. J.; Lee, Junmin; Zhou, Tony; Lee, K.S.; Liu, Patty; Lee, P.Y.; Tseng, Huan-Chung; Cronquist, Brian

Book ID: 126599806
Publisher: IEEE
Year: 2008
Weight: 879 KB
Category: Article
ISBN: 1424421942
DOI: 10.1109/IRWS.2008.4796082

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