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[IEEE 2013 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2013.10.13-2013.10.17)] 2013 IEEE International Integrated Reliability Workshop Final Report - (Late) Essential ingredients for modeling of hot-carrier degradation in ultra-scaled MOSFETs

✍ Scribed by Tyaginov, Stanislav; Bina, Markus; Franco, Jacopo; Osintsev, Dmitri; Wimmer, Yannick; Kaczer, Ben; Grasser, Tibor

Book ID: 125509909
Publisher: IEEE
Year: 2013
Weight: 483 KB
Category: Article
ISBN: 1479903515
DOI: 10.1109/IIRW.2013.6804168

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