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[IEEE 2011 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2011.10.16-2011.10.20)] 2011 IEEE International Integrated Reliability Workshop Final Report - Effects of pre-stress on hot-carrier degradation of N-channel MOSFETs

✍ Scribed by Kopley, T. E.; O'Connell, B.

Book ID: 120941961
Publisher: IEEE
Year: 2011
Weight: 937 KB
Category: Article
ISBN: 1457703106
DOI: 10.1109/IIRW.2011.6142591

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