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[IEEE 2011 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2011.10.16-2011.10.20)] 2011 IEEE International Integrated Reliability Workshop Final Report - Impact of STI stress on hot carrier degradation in 5V NMOSFET

✍ Scribed by Jiang, Hao; Yap, Hin Kiong; Pandey, Shesh Mani; Park, Jae Soo; Lim, James; Zeng, Xu

Book ID: 126611857
Publisher: IEEE
Year: 2011
Weight: 206 KB
Category: Article
ISBN: 1457703106
DOI: 10.1109/IIRW.2011.6142597

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