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[IEEE 2011 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2011.10.16-2011.10.20)] 2011 IEEE International Integrated Reliability Workshop Final Report - Generation of single-and double-charge electron traps in tunnel oxide of flash memory cells under Fowler-Nordheim stress

✍ Scribed by Tkachev, Yuri; Kotov, Alexander

Book ID: 126716428
Publisher: IEEE
Year: 2011
Weight: 513 KB
Category: Article
ISBN: 1457703106
DOI: 10.1109/IIRW.2011.6142599

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