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[IEEE 2006 IEEE International Integrated Reliability Workshop Final Report - South Lake Tahoe, CA, USA (2006.10.16-2006.09.19)] 2006 IEEE International Integrated Reliability Workshop Final Report - Reliability Characteristics of a 150GHZ fT/fmax Si/SiGeC Heterojunction Bipolar Transistor Under Reverse, Forward and Mixed-Mode Stress

✍ Scribed by Ruat, M.; Bourgeat, J.; Marin, M.; Ghibaudo, G.; Revil, N.; Pananakakis, G.

No coin nor oath required. For personal study only.

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