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Highly strained ln0.35Ga0.65As/GaAs layers grown by molecular beam epitaxy for high hole mobility transistors

✍ Scribed by Makoto Kudo; Tomoyoshi Mishima; Hidetoshi Matsumoto; Isao Ohbu; Takuma Tanimoto

Book ID: 112820307
Publisher: Springer US
Year: 1996
Tongue: English
Weight: 336 KB
Volume: 25
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02666728

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