In0.30Al0.70As/In0.30Ga0.70As quasi-insulating gate strained-layer field effect transistors grown by molecular beam epitaxy

✍ Scribed by P. Chu; C.L. Lin; H.H. Wieder

• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 480 KB
• Volume: 166
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(88)90376-8