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Highly strained InGaAs layers on GaAs grown by molecular beam epitaxy for high electron mobility transistors

✍ Scribed by Makoto Kudo; Tomoyoshi Mishima; Mineo Washima

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 404 KB
Volume: 150
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(95)80136-z

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## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri

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