Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

✍ Scribed by T. Piwoński; P. Sajewicz; J. M. Kubica; M. Zbroszczyk; K. Regiński; B. Mroziewicz; M. Bugajski

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 117 KB
• Volume: 29
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.1087

✦ Synopsis

Abstract

The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to critical parameters. This paper provides the operating characteristics of broad‐area uncoated Fabry–Perot structures with cavities of 700 μm length measured in the pulsed regime. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 29: 75–77, 2001.