𝔖 Bobbio Scriptorium
✦   LIBER   ✦

GaAs/AlGaAs quantum wells and double-heterostructure lasers grown by chemical beam epitaxy

✍ Scribed by W.T. Tsang; R.C. Miller

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
983 KB
Volume
77
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Long-wavelength strained-layer InGaAs/Ga
Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy
✍ T. Piwoński; P. Sajewicz; J. M. Kubica; M. Zbroszczyk; K. Regiński; B. Mroziewic 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB

## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri

Photoluminescence and photoluminescence
Photoluminescence and photoluminescence excitation of AlGaAs/GaAs quantum wells with growth-interrupted heterointerfaces grown by molecular beam epitaxy
✍ H. Nakashima; T. Takeuchi; K. Inoue; T. Fukunaga; D. Bimberg; J. Christen 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 66 KB

We have measured the photoluminescence (PL) and PL excitation (PLE) of AlGaAs/GaAs single quantum wells with growth-interrupted heterointerfaces. PLE shows the small Stokes shifts of less than 1 meV indicating the extremely flat heterointerfaces without microroughness. Photoluminescence spectra show