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Clustering and phonon effects in AlxGa1−xAsGaAs quantum-well heterostructure lasers grown by molecular beam epitaxy

✍ Scribed by N. Holonyak Jr.; W.D. Laidig; M.D. Camras; H. Morkoç; T.J. Drummond; K. Hess

Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
306 KB
Volume
40
Category
Article
ISSN
0038-1098

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Long-wavelength strained-layer InGaAs/Ga
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## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri