✦ LIBER ✦

The behavior of dopant incorporation and internal strain in AlxGa1−xAs0.03Sb0.97 grown by molecular beam epitaxy

✍ Scribed by A.Z. Li; J.X. Wang; Y.L. Zheng; G.P. Ru; W.G. Bi; Z.X. Chen; N.C. Zhu

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth parameter dependence of backgroun

✍ J.L. Benchimol; F. Alexandre; Y. Gao; F. Alaoui 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 257 KB

The incorporation behavior of As and P i

✍ Tsuen-Lin Lee; Jin-Shung Liu; Hao-Hsiung Lin 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 453 KB

Microscopic investigation of the strain

✍ M.G. Proietti; F. Martelli; S. Turchini; L. Alagna; M.R. Bruni; T. Prosperi; M.G 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 376 KB

Effects of the elastic strains and relax

✍ F. Turco; A.A. Mbaye; J. Massies 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 77 KB

The effect of in situ boron doping on th

✍ Seung-Chang Lee; Sun Jin Yun; Jeong Yong Lee 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 689 KB

Raman scattering as a probe of the tensi

✍ Lucia G. Quagliano; Zbig Sobiesierski 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 121 KB