## Abstract The operation in the 1020 nm wavelength range of strainedβlayer InGaAs/GaAs separateβconfinementβheterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Γ thick InGaAs quantum well with an indium content of 25%, which is close to cri
β¦ LIBER β¦
Microscopic investigation of the strain distribution in InGaAs/GaAs quantum well structures grown by molecular beam epitaxy
β Scribed by M.G. Proietti; F. Martelli; S. Turchini; L. Alagna; M.R. Bruni; T. Prosperi; M.G. Simeone; J. Garcia
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 376 KB
- Volume
- 127
- Category
- Article
- ISSN
- 0022-0248
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