Fabrication and characterization of InGaAs/GaAs strained quantum wires grown by molecular beam epitaxy
β Scribed by Y.-P. Chen; J.D. Reed; S.S. O'Keefe; W.J. Schaff; L.F. Eastman
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 575 KB
- Volume
- 134
- Category
- Article
- ISSN
- 0022-0248
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## Abstract The operation in the 1020 nm wavelength range of strainedβlayer InGaAs/GaAs separateβconfinementβheterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Γ thick InGaAs quantum well with an indium content of 25%, which is close to cri
Self-ordered InGaAs/GaAs quantum wires (QWRs) were obtained on (100) GaAs Vgrooved substrates by low-pressure metal-organic vapor phase epitaxy. Different structural and optical properties of compressively strained InGaAs wires grown on grooves exhibiting (111)A-like and (311)-like oriented facets w