Fabrication and characterization of strained InGaAs quantum wires grown on high index V-grooved GaAs substrates by LP-MOVPE

✍ Scribed by A. Passaseo; R. Rinaldi; M. De Giorgi; R. Cingolani; M. Catalano; A. Taurino

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 263 KB
• Volume: 25
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1998.0685

✦ Synopsis

Self-ordered InGaAs/GaAs quantum wires (QWRs) were obtained on (100) GaAs Vgrooved substrates by low-pressure metal-organic vapor phase epitaxy. Different structural and optical properties of compressively strained InGaAs wires grown on grooves exhibiting (111)A-like and (311)-like oriented facets were investigated.