𝔖 Bobbio Scriptorium
✦   LIBER   ✦

InGaAs/InP strained layer quantum wells grown by molecular beam epitaxy

✍ Scribed by S. Loualiche; A. Le Corre; A. Godefroy; F. Clerot; D. Lecrosnier; A. Poudoulec; S. Salaun

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
289 KB
Volume
127
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Long-wavelength strained-layer InGaAs/Ga
Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy
✍ T. PiwoΕ„ski; P. Sajewicz; J. M. Kubica; M. Zbroszczyk; K. RegiΕ„ski; B. Mroziewic πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 117 KB

## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Γ… thick InGaAs quantum well with an indium content of 25%, which is close to cri