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The effect of growth interruption on the photoluminescence linewidth of GaAs/InGaAs quantum wells grown by molecular beam epitaxy

โœ Scribed by S.F. Yoon; H.M. Li; K. Radhakrishnan; D.H. Zhang

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
372 KB
Volume
131
Category
Article
ISSN
0022-0248

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