✦ LIBER ✦

Narrow photoluminescence linewidth of quantum wells grown by gas source molecular beam epitaxy

✍ Scribed by K.T. Shiralagi; R.A. Puechner; K.Y. Choi; R. Droopad; G.N. Maracas

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 854 KB
Volume: 114
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(91)90050-f

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

InGaAsP/InP multiple quantum wells grown

InGaAsP/InP multiple quantum wells grown by gas-source molecular beam epitaxy

✍ H.Q. Hou; C.W. Tu 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 425 KB

Interface optimization of AlInPGaAs mult

Interface optimization of AlInPGaAs multiple quantum wells grown by gas source molecular beam epitaxy

✍ J.M. Kuo; H.C. Kuo; J.Y. Cheng; Y.C. Wang; Y. Lu; W.E. Mayo 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 445 KB

The effect of growth interruption on the

The effect of growth interruption on the photoluminescence linewidth of GaAs/InGaAs quantum wells grown by molecular beam epitaxy

✍ S.F. Yoon; H.M. Li; K. Radhakrishnan; D.H. Zhang 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 372 KB

High-quality InGaP and InGaP/InAlP multi

High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy

✍ Chunhui Yan; Dianzhao Sun; Hongxi Guo; Xiaobing Li; Shirong Zu; Yunheng Huang; Y 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 266 KB

Photoluminescence and photoluminescence

Photoluminescence and photoluminescence excitation of AlGaAs/GaAs quantum wells with growth-interrupted heterointerfaces grown by molecular beam epitaxy

✍ H. Nakashima; T. Takeuchi; K. Inoue; T. Fukunaga; D. Bimberg; J. Christen 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 66 KB

We have measured the photoluminescence (PL) and PL excitation (PLE) of AlGaAs/GaAs single quantum wells with growth-interrupted heterointerfaces. PLE shows the small Stokes shifts of less than 1 meV indicating the extremely flat heterointerfaces without microroughness. Photoluminescence spectra show

InGaAsP/InAlAs type I/type II multiple q

InGaAsP/InAlAs type I/type II multiple quantum well structures grown by gas source molecular beam epitaxy

✍ Yuichi Kawamura; Hidetoshi Iwamura 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 339 KB