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The effect of in situ boron doping on the strain relaxation of Si0.8Ge0.2 : B/Si heterostructure grown by molecular beam epitaxy

✍ Scribed by Seung-Chang Lee; Sun Jin Yun; Jeong Yong Lee


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
689 KB
Volume
150
Category
Article
ISSN
0022-0248

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