Surfactant effect of H atoms on the suppression of Ge segregation in Si overgrowth on Ge(n ML)/Si(100) substrates by gas source molecular beam epitaxy

✍ Scribed by S. Zaima; K. Sato; T. Kitani; T. Matsuyama; H. Ikeda; Y. Yasuda

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 500 KB
• Volume: 150
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(95)80079-r