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Growth processes in the initial stages of deposition of Ge films on (100) Si surfaces by GeH4 source molecular beam epitaxy

✍ Scribed by Koide, Y.; Zaima, S.; Ohshima, N.; Yasuda, Y.

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
285 KB
Volume
99
Category
Article
ISSN
0022-0248

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ChemInform Abstract: Initial Growth Proc
ChemInform Abstract: Initial Growth Processes in the Epitaxy of Ge with GeH4 on Oxidized Si Substrates.
✍ D. ANGERMEIER; W. S. KUHN; R. DRUIHLE; D. BALLUTAUD; R. TRIBOULET; W. GEBHARDT πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons βš– 28 KB πŸ‘ 2 views

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