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In-situ RHEED study of growth processes in the initial stage of SiGe alloy film deposition by gas source molecular beam epitaxy

โœ Scribed by Y. Koide; A. Furukawa; S. Zaima; Y. Yasuda


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
522 KB
Volume
115
Category
Article
ISSN
0022-0248

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The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ยฎlms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of reยฏection high-energy ele