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RHEED studies of initial stage of Ge film growth on (311)Si by gas source molecular beam epitaxy

✍ Scribed by Yasuda, Y.; Itoh, K.; Ohshima, N.; Koide, Y.; Zaima, S.

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 477 KB
Volume: 128
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(93)90341-s

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