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Growth studies of GaP on Si by gas-source molecular beam epitaxy

✍ Scribed by W.G. Bi; X.B. Mei; C.W. Tu

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 485 KB
Volume: 164
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(96)00026-7

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