✦ LIBER ✦

Low-temperature heteroepitaxial growth of Si on Sapphire by disilane gas-source molecular beam epitaxy

✍ Scribed by Kazuaki Sawada; Makoto Ishida; Kiyoteru Hayama; Tetsuro Nakamura; Tetso Suzaki

No coin nor oath required. For personal study only.

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