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Evidence for non-hydrogen desorption limited growth of Si from disilane at very low temperatures in gas source molecular beam epitaxy?

✍ Scribed by K. Werner; S. Butzke; S. Radelaar; P. Balk


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
444 KB
Volume
136
Category
Article
ISSN
0022-0248

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